A p-type wafer has a diffused Phosphorous n-type junction with a junction depth of 0.18μm.
a) If the wafer (no pre-existing oxide) is to be oxidized at 1050 ̊C for two hours to form a ‘dense,
non-porous, high-quality’ gate oxide. What is the gate oxide thickness achieved in this case?
b) At the subsequent step, the wafer is further oxidized at the same temperature to form another 0.2μm ‘low quality’ oxide. What is the time needed to finish this ‘faster’ process?